Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
3.5mm
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 135.60
₪ 6.78 Each (Supplied on a Reel) (ex VAT)
₪ 158.65
₪ 7.933 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
20
₪ 135.60
₪ 6.78 Each (Supplied on a Reel) (ex VAT)
₪ 158.65
₪ 7.933 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
20
| quantity | Unit price | Per Reel |
|---|---|---|
| 20 - 40 | ₪ 6.78 | ₪ 67.80 |
| 50 - 90 | ₪ 6.27 | ₪ 62.70 |
| 100 - 190 | ₪ 5.79 | ₪ 57.90 |
| 200+ | ₪ 5.775 | ₪ 57.75 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
250 mA
Maximum Drain Source Voltage
800 V
Package Type
SOT-223
Series
MDmesh, SuperMESH
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
7.7 nC @ 10 V
Width
3.5mm
Height
1.8mm
Minimum Operating Temperature
-55 °C
Product details


