Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Forward Voltage Vf
1.3V
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 1,429.50
₪ 14.295 Each (Supplied on a Reel) (ex VAT)
₪ 1,672.52
₪ 16.725 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100
₪ 1,429.50
₪ 14.295 Each (Supplied on a Reel) (ex VAT)
₪ 1,672.52
₪ 16.725 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
| quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 490 | ₪ 14.295 | ₪ 142.95 |
| 500 - 990 | ₪ 12.765 | ₪ 127.65 |
| 1000 - 2990 | ₪ 10.695 | ₪ 106.95 |
| 3000+ | ₪ 10.14 | ₪ 101.40 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Forward Voltage Vf
1.3V
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Maximum Operating Temperature
175°C
Length
6.15mm
Standards/Approvals
No
Width
5.2 mm
Height
0.95mm
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


