STMicroelectronics STripFET F3 Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerFLAT
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
5.2 mm
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Country of Origin
China
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
₪ 29,340.00
₪ 9.78 Each (On a Reel of 3000) (ex VAT)
₪ 34,327.80
₪ 11.443 Each (On a Reel of 3000) (inc. VAT)
3000
₪ 29,340.00
₪ 9.78 Each (On a Reel of 3000) (ex VAT)
₪ 34,327.80
₪ 11.443 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET F3
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
5.2 mm
Height
0.95mm
Length
6.15mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Country of Origin
China
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products