STMicroelectronics MDmesh M5 N-Channel MOSFET, 15 A, 710 V, 8-Pin PowerFLAT 5 x 6 STL18N65M5
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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Stock information temporarily unavailable.
₪ 613.20
₪ 30.66 Each (Supplied on a Reel) (ex VAT)
₪ 717.44
₪ 35.872 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
20
₪ 613.20
₪ 30.66 Each (Supplied on a Reel) (ex VAT)
₪ 717.44
₪ 35.872 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
20
| quantity | Unit price | Per Reel |
|---|---|---|
| 20 - 38 | ₪ 30.66 | ₪ 61.32 |
| 40+ | ₪ 29.85 | ₪ 59.70 |
Ideate. Create. Collaborate
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Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products