Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
60nC
Forward Voltage Vf
1.2V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
5W
Maximum Operating Temperature
175°C
Length
5.4mm
Standards/Approvals
No
Height
0.95mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 45,180.00
₪ 15.06 Each (On a Reel of 3000) (ex VAT)
₪ 52,860.60
₪ 17.62 Each (On a Reel of 3000) (inc. VAT)
3000
₪ 45,180.00
₪ 15.06 Each (On a Reel of 3000) (ex VAT)
₪ 52,860.60
₪ 17.62 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
PowerFLAT
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
60nC
Forward Voltage Vf
1.2V
Minimum Operating Temperature
-55°C
Maximum Power Dissipation Pd
5W
Maximum Operating Temperature
175°C
Length
5.4mm
Standards/Approvals
No
Height
0.95mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


