Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
60nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 119.40
₪ 23.88 Each (Supplied as a Tape) (ex VAT)
₪ 139.70
₪ 27.94 Each (Supplied as a Tape) (inc. VAT)
Standard
5
₪ 119.40
₪ 23.88 Each (Supplied as a Tape) (ex VAT)
₪ 139.70
₪ 27.94 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Tape |
|---|---|---|
| 5 - 45 | ₪ 23.88 | ₪ 119.40 |
| 50 - 245 | ₪ 19.275 | ₪ 96.38 |
| 250 - 495 | ₪ 15.615 | ₪ 78.08 |
| 500 - 2995 | ₪ 13.92 | ₪ 69.60 |
| 3000+ | ₪ 11.43 | ₪ 57.15 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
PowerFLAT
Series
STripFET H7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
5W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
60nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
6.35 mm
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


