N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2

RS Stock No.: 168-8819Brand: STMicroelectronicsManufacturers Part No.: STH150N10F7-2
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

DeepGate, STripFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

10.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Height

4.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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₪ 10.082

Each (On a Reel of 1000) (ex VAT)

₪ 11.796

Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2

1000

Available in multiples of 1000
1000₪ 10,082.46
2000₪ 20,164.93
3000₪ 30,247.39
4000₪ 40,329.86
5000₪ 50,412.32
6000₪ 60,494.78
7000₪ 70,577.25
8000₪ 80,659.71
9000₪ 90,742.18
10000₪ 100,824.64
11000₪ 110,907.10
12000₪ 120,989.57
13000₪ 131,072.03
14000₪ 141,154.50
15000₪ 151,236.96

₪ 10.082

Each (On a Reel of 1000) (ex VAT)

₪ 11.796

Each (On a Reel of 1000) (inc. VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2
Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000₪ 10,082.46
2000₪ 20,164.93
3000₪ 30,247.39
4000₪ 40,329.86
5000₪ 50,412.32
6000₪ 60,494.78
7000₪ 70,577.25
8000₪ 80,659.71
9000₪ 90,742.18
10000₪ 100,824.64
11000₪ 110,907.10
12000₪ 120,989.57
13000₪ 131,072.03
14000₪ 141,154.50
15000₪ 151,236.96

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

DeepGate, STripFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

10.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Height

4.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more