Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
200W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC Standard JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 919.80
₪ 30.66 Each (Supplied in a Tube) (ex VAT)
₪ 1,076.17
₪ 35.872 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
30
₪ 919.80
₪ 30.66 Each (Supplied in a Tube) (ex VAT)
₪ 1,076.17
₪ 35.872 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
30
| quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 88 | ₪ 30.66 | ₪ 61.32 |
| 90 - 298 | ₪ 28.365 | ₪ 56.73 |
| 300 - 598 | ₪ 26.01 | ₪ 52.02 |
| 600+ | ₪ 23.49 | ₪ 46.98 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
200W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Collector Emitter Saturation Voltage VceSAT
2.5V
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
JEDEC Standard JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
