Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 265.95
₪ 26.595 Each (Supplied in a Tube) (ex VAT)
₪ 311.16
₪ 31.116 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 265.95
₪ 26.595 Each (Supplied in a Tube) (ex VAT)
₪ 311.16
₪ 31.116 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 98 | ₪ 26.595 | ₪ 53.19 |
| 100 - 248 | ₪ 23.40 | ₪ 46.80 |
| 250 - 998 | ₪ 22.50 | ₪ 45.00 |
| 1000+ | ₪ 20.55 | ₪ 41.10 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
