Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
₪ 66.33
₪ 33.165 Each (In a Pack of 2) (ex VAT)
₪ 77.61
₪ 38.803 Each (In a Pack of 2) (inc. VAT)
Standard
2
₪ 66.33
₪ 33.165 Each (In a Pack of 2) (ex VAT)
₪ 77.61
₪ 38.803 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | ₪ 33.165 | ₪ 66.33 |
| 10 - 98 | ₪ 26.625 | ₪ 53.25 |
| 100 - 248 | ₪ 23.43 | ₪ 46.86 |
| 250 - 998 | ₪ 22.53 | ₪ 45.06 |
| 1000+ | ₪ 20.58 | ₪ 41.16 |
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.