STMicroelectronics, Type N-Channel IGBT, 40 A 600 V, 3-Pin TO-247, Through Hole
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
Trench Gate Field Stop
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 494.10
₪ 24.705 Each (Supplied in a Tube) (ex VAT)
₪ 578.10
₪ 28.905 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
20
₪ 494.10
₪ 24.705 Each (Supplied in a Tube) (ex VAT)
₪ 578.10
₪ 28.905 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
20
| quantity | Unit price | Per Tube |
|---|---|---|
| 20 - 48 | ₪ 24.705 | ₪ 49.41 |
| 50 - 98 | ₪ 23.04 | ₪ 46.08 |
| 100 - 198 | ₪ 21.51 | ₪ 43.02 |
| 200+ | ₪ 20.10 | ₪ 40.20 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
40A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
167W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
Trench Gate Field Stop
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products