Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
6A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.8V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 122.10
₪ 12.21 Each (Supplied in a Tube) (ex VAT)
₪ 142.86
₪ 14.286 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
10
₪ 122.10
₪ 12.21 Each (Supplied in a Tube) (ex VAT)
₪ 142.86
₪ 14.286 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 95 | ₪ 12.21 | ₪ 61.05 |
| 100 - 495 | ₪ 9.93 | ₪ 49.65 |
| 500 - 995 | ₪ 8.88 | ₪ 44.40 |
| 1000+ | ₪ 7.44 | ₪ 37.20 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
6A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
25W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.8V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Height
16.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
