STMicroelectronics, Type N-Channel IGBT, 29 A 600 V, 3-Pin TO-220FP, Through Hole
Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximum Operating Temperature
150°C
Height
10.4mm
Length
30.6mm
Standards/Approvals
RoHS
Series
Low Drop
Energy Rating
8mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
₪ 225.60
₪ 11.28 Each (Supplied in a Tube) (ex VAT)
₪ 263.95
₪ 13.198 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
20
₪ 225.60
₪ 11.28 Each (Supplied in a Tube) (ex VAT)
₪ 263.95
₪ 13.198 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
20
| quantity | Unit price | Per Tube |
|---|---|---|
| 20 - 40 | ₪ 11.28 | ₪ 112.80 |
| 50 - 90 | ₪ 10.875 | ₪ 108.75 |
| 100 - 190 | ₪ 9.75 | ₪ 97.50 |
| 200+ | ₪ 9.39 | ₪ 93.90 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
29A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
80W
Package Type
TO-220FP
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
3.8μs
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.75V
Maximum Operating Temperature
150°C
Height
10.4mm
Length
30.6mm
Standards/Approvals
RoHS
Series
Low Drop
Energy Rating
8mJ
Automotive Standard
No
Country of Origin
China
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products