Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
DeepGate, STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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₪ 127.95
₪ 12.795 Each (In a Pack of 10) (ex VAT)
₪ 149.70
₪ 14.97 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 127.95
₪ 12.795 Each (In a Pack of 10) (ex VAT)
₪ 149.70
₪ 14.97 Each (In a Pack of 10) (inc. VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 12.795 | ₪ 127.95 |
100 - 190 | ₪ 9.735 | ₪ 97.35 |
200+ | ₪ 9.495 | ₪ 94.95 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
DeepGate, STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.