STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252 STD65N55F3

RS Stock No.: 795-9000Brand: STMicroelectronicsManufacturers Part No.: STD65N55F3
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

STripFET F3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 104.18

₪ 20.835 Each (In a Pack of 5) (ex VAT)

₪ 121.89

₪ 24.377 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252 STD65N55F3
Select packaging type

₪ 104.18

₪ 20.835 Each (In a Pack of 5) (ex VAT)

₪ 121.89

₪ 24.377 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET F3 Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-252 STD65N55F3

Stock information temporarily unavailable.

Select packaging type

quantityUnit pricePer Pack
5 - 5₪ 20.835₪ 104.18
10 - 95₪ 16.86₪ 84.30
100 - 495₪ 13.725₪ 68.62
500 - 995₪ 12.15₪ 60.75
1000+₪ 10.26₪ 51.30

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

STripFET F3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

33.5nC

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Product details

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more