Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-252
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 104.18
₪ 20.835 Each (In a Pack of 5) (ex VAT)
₪ 121.89
₪ 24.377 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 104.18
₪ 20.835 Each (In a Pack of 5) (ex VAT)
₪ 121.89
₪ 24.377 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | ₪ 20.835 | ₪ 104.18 |
| 10 - 95 | ₪ 16.86 | ₪ 84.30 |
| 100 - 495 | ₪ 13.725 | ₪ 68.62 |
| 500 - 995 | ₪ 12.15 | ₪ 60.75 |
| 1000+ | ₪ 10.26 | ₪ 51.30 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-252
Series
STripFET F3
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


