STMicroelectronics STripFET F3 N-Channel MOSFET, 80 A, 55 V, 3-Pin DPAK STD65N55F3
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET F3
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.2mm
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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₪ 104.18
₪ 20.835 Each (In a Pack of 5) (ex VAT)
₪ 121.89
₪ 24.377 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 104.18
₪ 20.835 Each (In a Pack of 5) (ex VAT)
₪ 121.89
₪ 24.377 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | ₪ 20.835 | ₪ 104.18 |
| 10 - 95 | ₪ 16.86 | ₪ 84.30 |
| 100 - 495 | ₪ 13.725 | ₪ 68.62 |
| 500 - 995 | ₪ 12.15 | ₪ 60.75 |
| 1000+ | ₪ 10.26 | ₪ 51.30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Series
STripFET F3
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
33.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.2mm
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products