Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
₪ 70.12
₪ 14.025 Each (In a Pack of 5) (ex VAT)
₪ 82.04
₪ 16.409 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 70.12
₪ 14.025 Each (In a Pack of 5) (ex VAT)
₪ 82.04
₪ 16.409 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | ₪ 14.025 | ₪ 70.12 |
| 50+ | ₪ 11.355 | ₪ 56.78 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Series
STripFET II
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


