Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
₪ 15,825.00
₪ 6.33 Each (On a Reel of 2500) (ex VAT)
₪ 18,515.25
₪ 7.406 Each (On a Reel of 2500) (inc. VAT)
2500
₪ 15,825.00
₪ 6.33 Each (On a Reel of 2500) (ex VAT)
₪ 18,515.25
₪ 7.406 Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
900 V
Series
MDmesh, SuperMESH
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
22.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details


