Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Width
6.2 mm
Automotive Standard
No
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 38.40
₪ 3.84 Each (In a Pack of 10) (ex VAT)
₪ 44.93
₪ 4.493 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 38.40
₪ 3.84 Each (In a Pack of 10) (ex VAT)
₪ 44.93
₪ 4.493 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Width
6.2 mm
Automotive Standard
No
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


