Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 89.55
₪ 17.91 Each (In a Pack of 5) (ex VAT)
₪ 104.77
₪ 20.955 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 89.55
₪ 17.91 Each (In a Pack of 5) (ex VAT)
₪ 104.77
₪ 20.955 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₪ 17.91 | ₪ 89.55 |
| 25 - 45 | ₪ 14.415 | ₪ 72.08 |
| 50 - 245 | ₪ 13.23 | ₪ 66.15 |
| 250 - 495 | ₪ 12.015 | ₪ 60.08 |
| 500+ | ₪ 10.575 | ₪ 52.88 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


