Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Width
6.2mm
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 915.00
₪ 7.32 Each (Supplied on a Reel) (ex VAT)
₪ 1,070.55
₪ 8.564 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
125
₪ 915.00
₪ 7.32 Each (Supplied on a Reel) (ex VAT)
₪ 1,070.55
₪ 8.564 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
125
| quantity | Unit price | Per Reel |
|---|---|---|
| 125 - 495 | ₪ 7.32 | ₪ 36.60 |
| 500 - 1245 | ₪ 6.81 | ₪ 34.05 |
| 1250 - 4995 | ₪ 6.45 | ₪ 32.25 |
| 5000+ | ₪ 6.075 | ₪ 30.38 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Series
STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.6mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Width
6.2mm
Height
2.4mm
Minimum Operating Temperature
-55 °C
Product details


