Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 16,065.00
₪ 16.065 Each (On a Reel of 1000) (ex VAT)
₪ 18,796.05
₪ 18.796 Each (On a Reel of 1000) (inc. VAT)
1000
₪ 16,065.00
₪ 16.065 Each (On a Reel of 1000) (ex VAT)
₪ 18,796.05
₪ 18.796 Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
| quantity | Unit price | Per Reel |
|---|---|---|
| 1000 - 1000 | ₪ 16.065 | ₪ 16,065.00 |
| 2000 - 3000 | ₪ 15.975 | ₪ 15,975.00 |
| 4000 - 9000 | ₪ 15.885 | ₪ 15,885.00 |
| 10000 - 12000 | ₪ 15.81 | ₪ 15,810.00 |
| 13000+ | ₪ 15.72 | ₪ 15,720.00 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
100nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


