STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 STB80NF55L-06T4

RS Stock No.: 687-5083Brand: STMicroelectronicsManufacturers Part No.: STB80NF55L-06T4
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

100nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 63.63

₪ 31.815 Each (In a Pack of 2) (ex VAT)

₪ 74.45

₪ 37.224 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 STB80NF55L-06T4
Select packaging type

₪ 63.63

₪ 31.815 Each (In a Pack of 2) (ex VAT)

₪ 74.45

₪ 37.224 Each (In a Pack of 2) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 STB80NF55L-06T4

Stock information temporarily unavailable.

Select packaging type

quantityUnit pricePer Pack
2 - 18₪ 31.815₪ 63.63
20 - 38₪ 25.665₪ 51.33
40+₪ 25.515₪ 51.03

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

100nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more