STMicroelectronics STripFET II Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263

RS Stock No.: 920-6608Brand: STMicroelectronicsManufacturers Part No.: STB55NF06T4
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44.5nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 6,810.00

₪ 6.81 Each (On a Reel of 1000) (ex VAT)

₪ 7,967.70

₪ 7.968 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263

₪ 6,810.00

₪ 6.81 Each (On a Reel of 1000) (ex VAT)

₪ 7,967.70

₪ 7.968 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263

Stock information temporarily unavailable.

quantityUnit pricePer Reel
1000 - 1000₪ 6.81₪ 6,810.00
2000 - 3000₪ 6.30₪ 6,300.00
4000 - 9000₪ 6.255₪ 6,255.00
10000 - 19000₪ 6.24₪ 6,240.00
20000+₪ 6.165₪ 6,165.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

18mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

44.5nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more