Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 6,810.00
₪ 6.81 Each (On a Reel of 1000) (ex VAT)
₪ 7,967.70
₪ 7.968 Each (On a Reel of 1000) (inc. VAT)
1000
₪ 6,810.00
₪ 6.81 Each (On a Reel of 1000) (ex VAT)
₪ 7,967.70
₪ 7.968 Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
| quantity | Unit price | Per Reel |
|---|---|---|
| 1000 - 1000 | ₪ 6.81 | ₪ 6,810.00 |
| 2000 - 3000 | ₪ 6.30 | ₪ 6,300.00 |
| 4000 - 9000 | ₪ 6.255 | ₪ 6,255.00 |
| 10000 - 19000 | ₪ 6.24 | ₪ 6,240.00 |
| 20000+ | ₪ 6.165 | ₪ 6,165.00 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
50A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
44.5nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


