STMicroelectronics MDmesh M5 N-Channel MOSFET, 30 A, 710 V, 3-Pin D2PAK STB38N65M5
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
710 V
Package Type
D2PAK (TO-263)
Series
MDmesh M5
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Width
9.35mm
Height
4.6mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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Stock information temporarily unavailable.
₪ 41,820.00
₪ 41.82 Each (On a Reel of 1000) (ex VAT)
₪ 48,929.40
₪ 48.929 Each (On a Reel of 1000) (inc. VAT)
1000
₪ 41,820.00
₪ 41.82 Each (On a Reel of 1000) (ex VAT)
₪ 48,929.40
₪ 48.929 Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
| quantity | Unit price | Per Reel |
|---|---|---|
| 1000 - 1000 | ₪ 41.82 | ₪ 41,820.00 |
| 2000+ | ₪ 40.77 | ₪ 40,770.00 |
Ideate. Create. Collaborate
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Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
710 V
Package Type
D2PAK (TO-263)
Series
MDmesh M5
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
95 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
71 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Width
9.35mm
Height
4.6mm
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products