STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 STB30NF10T4

RS Stock No.: 687-5194Brand: STMicroelectronicsManufacturers Part No.: STB30NF10T4
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

115W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 73.12

₪ 14.625 Each (In a Pack of 5) (ex VAT)

₪ 85.55

₪ 17.111 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 STB30NF10T4
Select packaging type

₪ 73.12

₪ 14.625 Each (In a Pack of 5) (ex VAT)

₪ 85.55

₪ 17.111 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 35 A, 100 V Enhancement, 3-Pin TO-263 STB30NF10T4

Stock information temporarily unavailable.

Select packaging type

quantityUnit pricePer Pack
5 - 20₪ 14.625₪ 73.12
25 - 45₪ 11.775₪ 58.88
50 - 120₪ 10.785₪ 53.92
125 - 245₪ 9.75₪ 48.75
250+₪ 9.69₪ 48.45

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

115W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.35 mm

Height

4.6mm

Length

10.4mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in