Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20 V
Maximum Power Dissipation Pd
115W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
40nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
₪ 73.12
₪ 14.625 Each (In a Pack of 5) (ex VAT)
₪ 85.55
₪ 17.111 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 73.12
₪ 14.625 Each (In a Pack of 5) (ex VAT)
₪ 85.55
₪ 17.111 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | ₪ 14.625 | ₪ 73.12 |
| 25 - 45 | ₪ 11.775 | ₪ 58.88 |
| 50 - 120 | ₪ 10.785 | ₪ 53.92 |
| 125 - 245 | ₪ 9.75 | ₪ 48.75 |
| 250+ | ₪ 9.69 | ₪ 48.45 |
Technical documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20 V
Maximum Power Dissipation Pd
115W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
40nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
9.35 mm
Height
4.6mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


