N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STMicroelectronics STB100N6F7

RS Stock No.: 906-4668Brand: STMicroelectronicsManufacturers Part No.: STB100N6F7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.6mm

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

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₪ 89.55

₪ 17.91 Each (In a Pack of 5) (ex VAT)

₪ 104.77

₪ 20.955 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STMicroelectronics STB100N6F7
Select packaging type

₪ 89.55

₪ 17.91 Each (In a Pack of 5) (ex VAT)

₪ 104.77

₪ 20.955 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK STMicroelectronics STB100N6F7
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45₪ 17.91₪ 89.55
50 - 95₪ 14.415₪ 72.08
100 - 245₪ 11.73₪ 58.65
250 - 495₪ 11.175₪ 55.88
500+₪ 10.59₪ 52.95

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

STripFET F7

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Typical Gate Charge @ Vgs

12.6 nC @ 10 V

Width

9.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.6mm

Product details

N-Channel STripFET™ F7 Series, STMicroelectronics

The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more