STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

RS Stock No.: 719-632Brand: STMicroelectronicsManufacturers Part No.: SGT080R70ILB
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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

Country of Origin

China

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P.O.A.

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

STMicroelectronics G-HEMT P-Channel Transistor, 29 A, 700 V Enhancement, 8-Pin PowerFLAT SGT080R70ILB

Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

Transistor

Channel Type

P-Channel

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

700V

Package Type

PowerFLAT

Series

G-HEMT

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

-6 to 7 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

8.1 mm

Length

8.1mm

Height

0.9mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more