Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
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P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4
1
P.O.A.
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China