STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

RS Stock No.: 719-464Brand: STMicroelectronicsManufacturers Part No.: SCT012W90G3AG
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Technical documents

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

HIP-247-3

Series

SCT

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

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P.O.A.

STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
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7P.O.A.
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15P.O.A.

P.O.A.

STMicroelectronics Sct N channel-Channel Power MOSFET, 110 A, 900 V Enhancement, 3-Pin HIP-247-3 SCT012W90G3AG

Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

HIP-247-3

Series

SCT

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more