STMicroelectronics N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO PD55015-E

RS Stock No.: 829-0627PBrand: STMicroelectronicsManufacturers Part No.: PD55015-E
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

9.6mm

Maximum Operating Temperature

+165 °C

Height

3.6mm

Typical Power Gain

14 dB

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 859.42

₪ 171.88 Each (Supplied in a Tube) (ex VAT)

₪ 1,005.52

₪ 201.10 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO PD55015-E
Select packaging type

₪ 859.42

₪ 171.88 Each (Supplied in a Tube) (ex VAT)

₪ 1,005.52

₪ 201.10 Each (Supplied in a Tube) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 5 A, 40 V, 10-Pin PowerSO PD55015-E
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit price
5 - 9₪ 171.88
10+₪ 162.76

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

40 V

Package Type

PowerSO

Mounting Type

Surface Mount

Pin Count

10

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

73 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

9.6mm

Maximum Operating Temperature

+165 °C

Height

3.6mm

Typical Power Gain

14 dB

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more