Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.6mm
Maximum Operating Temperature
+165 °C
Height
3.6mm
Typical Power Gain
14 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
₪ 859.42
₪ 171.88 Each (Supplied in a Tube) (ex VAT)
₪ 1,005.52
₪ 201.10 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
₪ 859.42
₪ 171.88 Each (Supplied in a Tube) (ex VAT)
₪ 1,005.52
₪ 201.10 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price |
---|---|
5 - 9 | ₪ 171.88 |
10+ | ₪ 162.76 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
40 V
Package Type
PowerSO
Mounting Type
Surface Mount
Pin Count
10
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
73 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
9.6mm
Maximum Operating Temperature
+165 °C
Height
3.6mm
Typical Power Gain
14 dB
Product details
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.