Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Country of Origin
Korea, Republic Of
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
₪ 117.38
₪ 23.475 Each (In a Pack of 5) (ex VAT)
₪ 137.33
₪ 27.466 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 117.38
₪ 23.475 Each (In a Pack of 5) (ex VAT)
₪ 137.33
₪ 27.466 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | ₪ 23.475 | ₪ 117.38 |
25 - 45 | ₪ 19.275 | ₪ 96.38 |
50 - 120 | ₪ 18.60 | ₪ 93.00 |
125 - 245 | ₪ 17.865 | ₪ 89.32 |
250+ | ₪ 16.125 | ₪ 80.62 |
Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
100 V
Series
RSJ250P10
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
50 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.1mm
Typical Gate Charge @ Vgs
60 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
4.5mm
Forward Diode Voltage
1.2V
Country of Origin
Korea, Republic Of
Product details