Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Thailand
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
₪ 109.88
₪ 4.395 Each (In a Pack of 25) (ex VAT)
₪ 128.56
₪ 5.142 Each (In a Pack of 25) (inc. VAT)
25
₪ 109.88
₪ 4.395 Each (In a Pack of 25) (ex VAT)
₪ 128.56
₪ 5.142 Each (In a Pack of 25) (inc. VAT)
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 100 | ₪ 4.395 | ₪ 109.88 |
125 - 225 | ₪ 3.645 | ₪ 91.12 |
250 - 600 | ₪ 3.075 | ₪ 76.88 |
625 - 1225 | ₪ 2.58 | ₪ 64.50 |
1250+ | ₪ 1.98 | ₪ 49.50 |
Technical documents
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Series
RQ6E050AT
Package Type
TSMT-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-18 V, +18 V
Width
1.8mm
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
20.8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Thailand
Product details