Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 79.65
₪ 7.965 Each (Supplied on a Reel) (ex VAT)
₪ 93.19
₪ 9.319 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
₪ 79.65
₪ 7.965 Each (Supplied on a Reel) (ex VAT)
₪ 93.19
₪ 9.319 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
10 - 95 | ₪ 7.965 | ₪ 39.82 |
100 - 245 | ₪ 6.345 | ₪ 31.72 |
250 - 495 | ₪ 5.52 | ₪ 27.60 |
500+ | ₪ 4.77 | ₪ 23.85 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
49 A
Maximum Drain Source Voltage
60 V
Series
NVD5C668NL
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
44 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
18.7 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.38mm
Automotive Standard
AEC-Q101
Product details