Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Height
2.38mm
Series
NVD5C434N
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 40V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 21.605
Each (In a Pack of 2) (ex VAT)
₪ 25.278
Each (In a Pack of 2) (inc VAT)
2
₪ 21.605
Each (In a Pack of 2) (ex VAT)
₪ 25.278
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | ₪ 21.605 | ₪ 43.21 |
10 - 98 | ₪ 17.20 | ₪ 34.40 |
100 - 498 | ₪ 14.711 | ₪ 29.42 |
500 - 998 | ₪ 12.697 | ₪ 25.39 |
1000+ | ₪ 10.572 | ₪ 21.14 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
163 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
117 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
80.6 nC @ 10 V
Height
2.38mm
Series
NVD5C434N
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Minimum Operating Temperature
-55 °C
Product details