Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
950 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 157.50
₪ 2.10 Each (Supplied on a Reel) (ex VAT)
₪ 184.28
₪ 2.457 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
75
₪ 157.50
₪ 2.10 Each (Supplied on a Reel) (ex VAT)
₪ 184.28
₪ 2.457 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
75
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 75 - 125 | ₪ 2.10 | ₪ 52.50 |
| 150 - 275 | ₪ 1.35 | ₪ 33.75 |
| 300 - 575 | ₪ 1.305 | ₪ 32.62 |
| 600+ | ₪ 1.29 | ₪ 32.25 |
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
950 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.7mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Height
0.6mm
Minimum Operating Temperature
-55 °C
Product details


