onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G

RS Stock No.: 780-4755PBrand: onsemiManufacturers Part No.: NTS2101PT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 5 V

Maximum Operating Temperature

+150 °C

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

0.9mm

Product details

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

₪ 132.75

₪ 2.655 Each (Supplied on a Reel) (ex VAT)

₪ 155.32

₪ 3.106 Each (Supplied on a Reel) (inc. VAT)

onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G
Select packaging type

₪ 132.75

₪ 2.655 Each (Supplied on a Reel) (ex VAT)

₪ 155.32

₪ 3.106 Each (Supplied on a Reel) (inc. VAT)

onsemi P-Channel MOSFET, 1.5 A, 8 V, 3-Pin SOT-323 NTS2101PT1G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
50 - 225₪ 2.655₪ 66.38
250 - 475₪ 1.35₪ 33.75
500 - 975₪ 1.305₪ 32.62
1000+₪ 1.05₪ 26.25

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

210 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Length

2.2mm

Typical Gate Charge @ Vgs

6.4 nC @ 5 V

Maximum Operating Temperature

+150 °C

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

0.9mm

Product details

P-Channel Power MOSFET, 8V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more