Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 2.056
Each (Supplied on a Reel) (ex VAT)
₪ 2.405
Each (Supplied on a Reel) (inc VAT)
25
₪ 2.056
Each (Supplied on a Reel) (ex VAT)
₪ 2.405
Each (Supplied on a Reel) (inc VAT)
25
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
25 - 25 | ₪ 2.056 | ₪ 51.39 |
50 - 100 | ₪ 1.524 | ₪ 38.11 |
125 - 475 | ₪ 0.979 | ₪ 24.47 |
500 - 1225 | ₪ 0.881 | ₪ 22.02 |
1250+ | ₪ 0.769 | ₪ 19.23 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
2.2 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
5.1 nC @ 10 V
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.01mm
Country of Origin
China
Product details