onsemi P-Channel MOSFET, 2.4 A, 20 V, 3-Pin SOT-23 NTR4101PT1G
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₪ 118.80
₪ 1.485 Each (Supplied on a Reel) (ex VAT)
₪ 139.00
₪ 1.737 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
80
₪ 118.80
₪ 1.485 Each (Supplied on a Reel) (ex VAT)
₪ 139.00
₪ 1.737 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
80
Stock information temporarily unavailable.
| quantity | Unit price | Per Reel |
|---|---|---|
| 80 - 148 | ₪ 1.485 | ₪ 2.97 |
| 150 - 748 | ₪ 1.02 | ₪ 2.04 |
| 750+ | ₪ 0.975 | ₪ 1.95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
85 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Width
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Height
0.94mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products