Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 131.25
₪ 2.625 Each (Supplied as a Tape) (ex VAT)
₪ 153.56
₪ 3.071 Each (Supplied as a Tape) (inc. VAT)
Standard
50
₪ 131.25
₪ 2.625 Each (Supplied as a Tape) (ex VAT)
₪ 153.56
₪ 3.071 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
50
Stock information temporarily unavailable.
| quantity | Unit price | Per Tape |
|---|---|---|
| 50 - 50 | ₪ 2.625 | ₪ 131.25 |
| 100 - 200 | ₪ 1.14 | ₪ 57.00 |
| 250 - 450 | ₪ 1.11 | ₪ 55.50 |
| 500 - 950 | ₪ 1.095 | ₪ 54.75 |
| 1000+ | ₪ 0.93 | ₪ 46.50 |
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Product details


