Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.12mm
Country of Origin
China
₪ 60.26
₪ 60.26 Each (ex VAT)
₪ 70.50
₪ 70.50 Each (inc. VAT)
1
₪ 60.26
₪ 60.26 Each (ex VAT)
₪ 70.50
₪ 70.50 Each (inc. VAT)
1
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quantity | Unit price |
---|---|
1 - 4 | ₪ 60.26 |
5 - 9 | ₪ 54.80 |
10 - 24 | ₪ 50.46 |
25+ | ₪ 46.83 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
82 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
48 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
4.9mm
Length
10.63mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
16.12mm
Country of Origin
China