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onsemi N-Channel MOSFET, 71 A, 60 V, 5-Pin DFN NTMFS5C670NLT1G

RS Stock No.: 900-8814Brand: onsemiManufacturers Part No.: NTMFS5C670NLT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.1mm

Typical Gate Charge @ Vgs

20 nC @ 10 V, 9 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

1.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

₪ 34.20

₪ 3.42 Each (In a Pack of 10) (ex VAT)

₪ 40.01

₪ 4.001 Each (In a Pack of 10) (inc. VAT)

onsemi N-Channel MOSFET, 71 A, 60 V, 5-Pin DFN NTMFS5C670NLT1G
Select packaging type

₪ 34.20

₪ 3.42 Each (In a Pack of 10) (ex VAT)

₪ 40.01

₪ 4.001 Each (In a Pack of 10) (inc. VAT)

onsemi N-Channel MOSFET, 71 A, 60 V, 5-Pin DFN NTMFS5C670NLT1G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

71 A

Maximum Drain Source Voltage

60 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.1mm

Typical Gate Charge @ Vgs

20 nC @ 10 V, 9 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

1.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more