Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 9 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
1.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Malaysia
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 34.20
₪ 3.42 Each (In a Pack of 10) (ex VAT)
₪ 40.01
₪ 4.001 Each (In a Pack of 10) (inc. VAT)
Standard
10
₪ 34.20
₪ 3.42 Each (In a Pack of 10) (ex VAT)
₪ 40.01
₪ 4.001 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 9 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
1.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
Malaysia
Product details