Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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₪ 43.448
Each (In a Tube of 30) (ex VAT)
₪ 50.834
Each (In a Tube of 30) (inc VAT)
30
₪ 43.448
Each (In a Tube of 30) (ex VAT)
₪ 50.834
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | ₪ 43.448 | ₪ 1,303.45 |
150+ | ₪ 40.554 | ₪ 1,216.61 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
46 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
337 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China