Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
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₪ 68.578
Each (In a Tube of 30) (ex VAT)
₪ 80.236
Each (In a Tube of 30) (inc VAT)
30
₪ 68.578
Each (In a Tube of 30) (ex VAT)
₪ 80.236
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 120 | ₪ 68.578 | ₪ 2,057.33 |
150+ | ₪ 64.019 | ₪ 1,920.56 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
446 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
158 nC @ 10 V
Width
4.82mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Country of Origin
China