N-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4508NG

RS Stock No.: 163-1112Brand: onsemiManufacturers Part No.: NTHD4508NT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

2.6 nC @ 4.5 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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₪ 1.874

Each (On a Reel of 3000) (ex VAT)

₪ 2.193

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4508NG

3000

Available in multiples of 3000
3000₪ 5,621.57
6000₪ 11,243.14
9000₪ 16,864.70
12000₪ 22,486.27
15000₪ 28,107.84
18000₪ 33,729.41
21000₪ 39,350.98
24000₪ 44,972.54
27000₪ 50,594.11
30000₪ 56,215.68
33000₪ 61,837.25
36000₪ 67,458.82
39000₪ 73,080.38
42000₪ 78,701.95
45000₪ 84,323.52

₪ 1.874

Each (On a Reel of 3000) (ex VAT)

₪ 2.193

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET onsemi NTHD4508NG
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000₪ 5,621.57
6000₪ 11,243.14
9000₪ 16,864.70
12000₪ 22,486.27
15000₪ 28,107.84
18000₪ 33,729.41
21000₪ 39,350.98
24000₪ 44,972.54
27000₪ 50,594.11
30000₪ 56,215.68
33000₪ 61,837.25
36000₪ 67,458.82
39000₪ 73,080.38
42000₪ 78,701.95
45000₪ 84,323.52

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.7mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.1mm

Typical Gate Charge @ Vgs

2.6 nC @ 4.5 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Country of Origin

Malaysia

Product details

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more