onsemi P-Channel MOSFET, 2.9 A, 60 V, 6-Pin TSOP-6 NTGS5120PT1G
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
60 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
142 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
1
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
₪ 317.25
₪ 2.115 Each (Supplied on a Reel) (ex VAT)
₪ 371.18
₪ 2.475 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
150
₪ 317.25
₪ 2.115 Each (Supplied on a Reel) (ex VAT)
₪ 371.18
₪ 2.475 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
150
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 150 - 725 | ₪ 2.115 | ₪ 52.88 |
| 750 - 1475 | ₪ 2.055 | ₪ 51.38 |
| 1500+ | ₪ 1.725 | ₪ 43.12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
60 V
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
142 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.7mm
Number of Elements per Chip
1
Transistor Material
Si
Length
3.1mm
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products