Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Width
0.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 0.629
Each (On a Reel of 3000) (ex VAT)
₪ 0.736
Each (On a Reel of 3000) (inc VAT)
3000
₪ 0.629
Each (On a Reel of 3000) (ex VAT)
₪ 0.736
Each (On a Reel of 3000) (inc VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | ₪ 0.629 | ₪ 1,887.84 |
6000 - 12000 | ₪ 0.629 | ₪ 1,887.84 |
15000 - 27000 | ₪ 0.629 | ₪ 1,887.84 |
30000+ | ₪ 0.629 | ₪ 1,887.84 |
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Width
0.95mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.7mm
Typical Gate Charge @ Vgs
2.1 nC @ 5 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details