onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055L170T4G

RS Stock No.: 802-1493Brand: onsemiManufacturers Part No.: NTD3055L170T4G
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

28.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

4.7 nC @ 5 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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₪ 115.50

₪ 4.62 Each (In a Pack of 25) (ex VAT)

₪ 135.14

₪ 5.405 Each (In a Pack of 25) (inc. VAT)

onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055L170T4G
Select packaging type

₪ 115.50

₪ 4.62 Each (In a Pack of 25) (ex VAT)

₪ 135.14

₪ 5.405 Each (In a Pack of 25) (inc. VAT)

onsemi N-Channel MOSFET, 9 A, 60 V, 3-Pin DPAK NTD3055L170T4G

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Pack
25 - 25₪ 4.62₪ 115.50
50 - 75₪ 3.60₪ 90.00
100 - 225₪ 2.865₪ 71.62
250 - 475₪ 2.595₪ 64.88
500+₪ 2.34₪ 58.50

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

28.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

4.7 nC @ 5 V

Maximum Operating Temperature

+175 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more