P-Channel MOSFET, 27 A, 60 V, 3-Pin D2PAK onsemi NTB25P06G

RS Stock No.: 780-0510Brand: onsemiManufacturers Part No.: NTB25P06T4G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.29mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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₪ 43.12

₪ 8.625 Each (Supplied as a Tape) (ex VAT)

₪ 50.45

₪ 10.091 Each (Supplied as a Tape) (inc. VAT)

P-Channel MOSFET, 27 A, 60 V, 3-Pin D2PAK onsemi NTB25P06G
Select packaging type

₪ 43.12

₪ 8.625 Each (Supplied as a Tape) (ex VAT)

₪ 50.45

₪ 10.091 Each (Supplied as a Tape) (inc. VAT)

P-Channel MOSFET, 27 A, 60 V, 3-Pin D2PAK onsemi NTB25P06G

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.29mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

9.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.83mm

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more