Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Series
FCH040N65S3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
136 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
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₪ 44.343
Each (In a Tube of 450) (ex VAT)
₪ 51.881
Each (In a Tube of 450) (inc VAT)
450
₪ 44.343
Each (In a Tube of 450) (ex VAT)
₪ 51.881
Each (In a Tube of 450) (inc VAT)
450
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
450 - 450 | ₪ 44.343 | ₪ 19,954.47 |
900+ | ₪ 37.855 | ₪ 17,034.61 |
Technical documents
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
65 A
Maximum Drain Source Voltage
650 V
Series
FCH040N65S3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
417 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
136 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China